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Advanced Schottky Barrier Diodes
ASD751V
Surface mount small signal type
Extermely thin package Low stored charge Majority carrier conduction
R0.3 (0.012) Typ.
Formosa MS
0.087 (2.2) 0.071 (1.8) 0.012(0.3) Typ.
0.055 (1.4) 0.039 (1.0)
0.043 (1.1) 0.028 (0.7)
Mechanical data
Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram
0805
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Repetitive peak reverse voltage Continuous reverse voltage Mean rectifying current Forward surge current Capacitance between terminals Storage temperature Operating temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 10VDC reverse voltage CONDITIONS Symbol VRM VR IO IFSM CT TJ TSTG -40 -40 20 +125 +125 MIN. TYP. MAX. 40 30 30 200 UNIT V V mA mA pF
o o
C C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER Forward voltage Reverse current IF = 1.0 mA DC VR = 30 V DC CONDITIONS Symbol VF IR MIN. TYP. 0.26 0.17 MAX. 0.37 0.5 UNIT V uA
RATING AND CHARACTERISTIC CURVES (ASD751V)
FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000m
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.2 - TYPICAL REVERSE CHARACTERISTICS 100
O
Typ. pulse measurement
100m 10m 1m 100u 10u 1u
Ta =
REVERSE CURRENT , (uA)
Ta = 125 C 10 Ta = 75 C
O
5C
O
12
Ta = 75 C
O
1 Ta = 25 C 100n Ta = -25 C Typ. pulse measurement 5 10 15 20 25 30 35
REVERSE VOLTAGE , (V)
O O
Ta = 25 C Ta = -25 C
O
O
10n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1n 0
FORWARD VOLT AGE,(V)
FIG.3-TYPICAL TERMINALS CAPACITANCE 100
CAPACITANCE BETWEEN TERMINALS ,(pF)
50
Ta = 25 C f = 1MHz
O
20 10 5
2 1 0
2
4
6
8
10
12
14
REVERSE VOLTAGE , (V)

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